Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package. N-channel 40 V, 0.005 Ohm, 80 A STripFET (TM) II Power MOSFET in TO-220 package. Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in a DPAK package. Trans MOSFET Array Dual N-CH 600V 40A 12-Pin Case SP1:Avnet Pm-Mosfet-Fredfet-8-Sp1 Rohs Compliant: Yes:Newark MOSFET 2N-CH 600V 40A SP1:Digi-Key: On Order: 1:$40.550. APTM60A11FT1G: Microchip Technology: MOSFET 2N-CH 600V 40A SP1: On Order: 15:$50.18000.
The Power MOSFET N-Channel STP40NF10L is an Enhancement Mode MOSFET that can handle up to 100V @ 40A with low on resistance of 33mΩ and is logic compatible.
- Power MOSFET N-Channel STP40NF10L
KEY FEATURES OF POWER MOSFET N-CHANNEL STP40NF10L:
- N-Channel Power Enhancement Mode MOSFET
- Up to 100V and 40A power handling capability
- RDS(on) = 36mΩ at 5Vgs / 33mΩ @ 10V
- 5V Logic compatible and 3.3V compatible with current derating
The STP40NF10L is fully 5V logic compatible and an excellent general purpose N-Channel Power MOSFET for use with uCs. If used with a 3.3V uC, the output current needs to be derated significantly to < 5A.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor which is why we just call it a MOSFET for short. Enhancement mode means that when the device has zero Gate voltage, the device is off. This is denoted by the schematic symbol with the broken line which indicates that it does not conduct when there is no Gate voltage.
Power MOSFETs are most often used a switches where they are turned fully ON or OFF to control a load such as a motor or high power LEDs. They are ideally suited for this because when the MOSFET is turned fully ON (Saturation Region), it has a very low resistance and can pass a lot of current without much power being dissipated in the device similar to a mechanical switch. When they are turned OFF (Cut-Off Region), they act as an open circuit much like a mechanical switch would when it is off.
For some applications MOSFETs are also used in their Linear Region where they are are partially conducting, such as for an amplifier, analog fan speed controller or battery charger.
The very low ‘ON’ resistance means that there is very little voltage drop through the device and that also helps to keep power dissipation down.
If using this device with a 5V uC, it is possible to drive the MOSFET gate directly from an digital output pin as shown in the example circuit here.
When used for switching power to a load, N-Channel MOSFETs are typically used on the low side which means they are placed between the load and ground.
N-Channel MOSFET Theory of Operation
MOSFET spec sheets can look pretty complicated, but for many applications we just need to pay attention to a few key parameters that are explained here.
VDS : Drain-To-Source Voltage is the maximum voltage that the device can be used to switch. If you’re switching 12V, you need a device with a VDS > 12V and usually you want something with a fair amount of safety margin.
ID : Continuous Drain Current is the maximum current that the device can handle. this will often be specified under several conditions such as at 25C room temperature and at 100C or similar high operating temperature. Achieving the maximum current through the device assumes that you are driving it fully on and that appropriate heat sinking is applied. If you have a device that draws 10A, you need an ID > 10A. Generally the higher the ID rating of the device compared to the amount of current you need to pass though it, the easier it will be to manage thermals.
VGS : Gate Voltage is the voltage differential between the Gate and the Source which is how hard the MOSFET is being driven.
VGS(th) : Gate Threshold Voltage is the voltage at which the MOSFET starts to conduct. Any voltage less than this will drive the MOSFET to the OFF state known as the Cut-Off Region. To possibly be logic compatible, the VGS(th) needs to be well under the logic high voltage level.
RDS(on) : Static Drain-to-Source On-Resistance is the minimum resistance of the MOSFET when it is driven to the fully ON state known as the Saturation Region. The key to look for here is that RDS(on) may be specified at one or a couple of VGS voltages.
If it is spec’d at 10V only, the part is not logic compatible and needs something close to 10V to drive it into saturation. This means a MOSFET driver, transistor or some other means is required to drive the gate with something close to 10V.
Mosfet 40a 200v
If there are two voltages listed, the highest voltage will be the voltage at which the device is fully saturated and show the lowest resistance, often 10V. The lower voltage is often around 4.5V and shows the resistance if you were to drive it directly off of 5V logic. Having this specified implies that the device is at least partially 5V logic compatible even if it isn’t being driven to full saturation.
Looking at the example spec sheet below, this is telling us that to drive the MOSFET to full saturation requires a VGS voltage of 10V where max resistance is 8.7mOhm. If we were to drive it instead at 4.5V directly off of 5V logic, the resistance basically is twice as high, but is still only about 16mOhm.
A device like this can be driven directly off of 5V logic, but because its internal resistance is twice as high, it will drop twice the amount of voltage and dissipate twice as much power/heat in the device for the same current. From a practical standpoint, this means it can handle about 1/2 the full rated current than it could handle if it was driven at 10V. I would consider this as being partially 5V logic compatible. If you are using a 60A device to control a 20A load for instance, this will generally be fine. If you need 40A out of it, then you will need to drive it harder.
These parts are getting hard to find but we have them in stock.
|RDS||Drain-Source On-Resistance||0.033Ω @ 10V / 0.036Ω @ 5V|
|PD||Power Dissipation||150W (requires heat sink)|
|Package Type||Plastic Tab, 3-lead, through hole|
|Product Category:||Transistors - FETs, MOSFETs - Arrays|
|Description:||MOSFET 2N-CH 600V 40A SP1|
|Lead Time:||30 Weeks|
|Qty||Unit Price||Ext. Price|
|FET Type:||2 N-Channel (Half Bridge)|
|Drain to Source Voltage (Vdss):||600V|
|Current - Continuous Drain (Id) @ 25°C:||40A|
|Rds On (Max) @ Id Vgs:||132mOhm @ 33A 10V|
|Vgs(th) (Max) @ Id:||5V @ 2．5mA|
|Gate Charge (Qg) (Max) @ Vgs:||330nC @ 10V|
|Input Capacitance (Ciss) (Max) @ Vds:||10552pF @ 25V|
|Power - Max:||390W|
|Operating Temperature:||-40°C ~ 150°C (TJ)|
|Mounting Type:||Chassis Mount|
|Package / Case:||SP1|
|Supplier Device Package:||SP1|
|Mfr.Part#:APTM60A11FT1G||Compare: Current Part||Manufacturers:Microsemi||Category:MOSFETs||Description: SP-1 N-CH 600V 40A|
|Mfr.Part#:APTM50H15FT1G||Compare:APTM60A11FT1G VS APTM50H15FT1G||Manufacturers:Microsemi||Category:MOSFETs||Description: SP-1 N-CH 500V 25A|
|Mfr.Part#:APTM50AM70FT1G||Compare:APTM60A11FT1G VS APTM50AM70FT1G||Manufacturers:Microsemi||Category:MOSFETs||Description: SP-1 N-CH 500V 50A|
|Mfr.Part#:APTM60H23FT1G||Compare:APTM60A11FT1G VS APTM60H23FT1G||Manufacturers:Microsemi||Category:MOSFETs||Description: SP-1 N-CH 600V 20A|
Pm-Mosfet-Fredfet-8-Sp1 Rohs Compliant: Yes:Newark
MOSFET 2N-CH 600V 40A SP1:Digi-Key
About MicrosemiMicrosemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
IGBTs from MicrosemiIGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The frequency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
Environmental & Export Classifications
|RoHS Status:||RoHS Compliant|
|Moisture Sensitivity Level (MSL):||1 (Unlimited)|
Documents & Media
|HTML Datasheet:||Power Products Catalog|
Mosfet 40a 50vMicrochip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.
|APTM60A11FT1G||Microchip / Microsemi||Discrete Semiconductor Modules DOR CC8117||On Order|
|APTM60A11FT1G||Microchip||Trans MOSFET Array Dual N-CH 600V 40A 12-Pin Case SP1:Avnet|
Pm-Mosfet-Fredfet-8-Sp1 Rohs Compliant: Yes:Newark
MOSFET 2N-CH 600V 40A SP1:Digi-Key
|APTM60A11FT1G||Microchip Technology||MOSFET 2N-CH 600V 40A SP1||On Order|
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