Mosfet 6426

Posted : admin On 1/29/2022

Type Designator: AON6418

Type of Transistor: MOSFET

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled. Symbol Min Typ Max Units BV DSS 30 V VDS =30V, V GS =0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 5.8 7.2 TJ=125°C 8.7 10.5 9 11.5 mΩ gFS 62 S VSD 0.71 1 V IS 30 A Ciss 840 pF Coss 330 pF Crss 50 pF Rg 0.6 1.2 1.8 Ω Qg(10V) 13 nC Qg(4.5V) 6.2 nC Qgs 2.5 nC Qgd 3.5 nC Qgs 2.5 nC Qgd 3.5 nC tD(on) 5.5 ns tr 3 ns Electrical Characteristics (T J=25°C unless.

6426 Mosfet Price

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Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage Vds : 30 V

Maximum Gate-Source Voltage Vgs : 20 V

Maximum Gate-Threshold Voltage Vgs(th) : 1.8 V

Maximum Drain Current Id : 32 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4.8 nS

Drain-Source Capacitance (Cd): 526 pF

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: DFN5X6EP

AON6418 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6418 Datasheet (PDF)

0.1. aon6418.pdf Size:306K _aosemi

AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

8.1. aon6414.pdf Size:156K _aosemi

AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon6416.pdf Size:268K _aosemi

AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

8.3. aon6414a.pdf Size:268K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

8.4. aon6414al.pdf Size:384K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

8.5. aon6410.pdf Size:158K _aosemi

AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)

8.6. aon6413.pdf Size:278K _aosemi

AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)

8.7. aon6411.pdf Size:262K _aosemi

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

Datasheet: AON7514, AON7702, AON6200, AON6206, AON6408, AON6410, AON6414, AON6414AL, APT50M38JLL, AON6422, AON6454, AON6514, AON6534, AON6542, AON6702, AON6704A, AON6708.




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MOSFET: CEZ3R04 CEZ3P08 CES2322 CEB93A3 CEF9060N CEB6086 CEN2321A CEN2307A CEM9288 CEM6056L CEM4052 CEM2192 CEU25N02 CED25N02 CEU20N02 CED20N02


This is one of the MOSFET types. This is a kind of the transistor.

Marking : 6426

Part Number : AON6426

Function : 30V, N-Channel MOSFET (Transistor)

Package : DFN5X6 Type

Ao 6426 Mosfet

Manufacturers : Alpha & Omega Semiconductor ( aosmd.com )

Image

Description

The 6426 mosfet combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.

Product Summary

1. VDS (V) = 30V
2. ID = 65A (VGS = 10V)
3. RDS(ON) < 5.5mΩ (VGS = 10V)
4. RDS(ON) < 7.5mΩ (VGS = 4.5V)

Absolute Maximum Ratings at Ta = 25°C

1. Drain-Source Voltage : Vds = 30 V
2. Gate-Source Voltage : Vgs = ±20 V
3. Continuous Drain Current : Id = 65 A
4. Avalanche Current : Iar = 42 A
5. Power Dissipation : Pd = 42 W

Pinouts

6426 Mosfet Equivalent

6426 Datasheet PDF Download

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6426 mosfet equivalent

6426 Mosfet Pdf

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